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| 3VD045060JL 3VD045060JL N-channel MOSFET CHIPS DESCRIPTION O 3VD045060JL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. O O O O O O High density cell design for low RDS(ON) Rugged and reliable. Fast switching performance. High saturation current capability. The chips may be packaged in SOT-23 type and the typical equivalent product is 2N7002. The packaged product is widely used in the small servo motor control, power MOS-FET gate drivers, and other switching applications. O Die size: 0.53mm*0.53mm. O O Chip Thickness: 23020m. Top metal : Al, Backside Metal : Au. PAD1: GATE PAD2: SOURCE 1 2 CHIP TOPOGRAPHY ABSOLUTE MAXIMUM RATINGS (Tamb=25C) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (SOT-23) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID PD TJ Tstg Ratings 60 20 115 200 150 -55-150 Unit V V mA mW C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage* Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current* Drain-Source On-Resistance* Symbol V(BR)DSS Vth(GS) lGSS IDSS ID(ON) RDS(on) Test conditions VGS=0V, ID=10A VGS =0V, ID=3mA VDS= VGS, ID=250A VDS=0V, VGS =20V VDS=60V, VGS =0V VGS=10V, VDS=7V VGS=10V, ID=500mA VGS=5V, ID=50mA VGS=10V, ID=500mA VGS=5V, ID=50mA VDS=10V, ID=200mA IS=115mA, VGS =0V 80 1.2 500 1.2 1.7 7.5 7.5 3.75 0.375 V ms V Min 60 60 1 2.5 100 1 nA A mA V Typ Max Unit Drain-Source On- Voltage * Forward Transconductance* Diode Forward Voltage VDS(on) gts VSDF Note:* Pulse test, pulse width 300S, duty cycle 2% HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2007.07.02 Page 1 of 1 |
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